Channeling RBS spectra of the following Si (111) substrates: unimplanted virgin (—), as implanted (엯), implanted and pulsed laser melted (PLM) at (▿), and implanted and PLM at (---). The random spectrum of the virgin Si (111) wafer is also shown (+). The ion dose for the implanted spectra is . The peak at is from surface oxygen.
(a) XTEM image of sample implanted to a dose of and irradiated at , sample surface is in upper right. (b) Lattice resolution XTEM image of the same sample.
Plot of the calculated maximum melt depth vs laser fluence for a structure consisting of a thick layer buried at a depth of in crystalline silicon (▴) and another consisting of thick on top of the crystalline silicon substrate (엯). Values inferred from SIMS (●) measurements are also shown with error bars.
Dark curves measured for samples implanted at a dose , irradiated at , and furnace annealed at different temperatures.
curves measured under one sun for samples implanted to a dose of , irradiated at , and furnace annealed at different temperatures.
curves measured under one sun for samples implanted with different ion doses in , irradiated at , and furnace annealed at . The inset shows the variation of the efficiency vs ion implantation dose for different annealing temperatures.
Dark curves corresponding to substrates implanted to a dose of , laser irradiated at , and subsequently annealed at 550 or .
Total sulfur concentration, Hall mobility, free carrier concentration, and carrier-to-donor ratio in the laser melted layers for several implantation doses and a laser fluence of .
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