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Bit-array patterns with density over fabricated by extreme ultraviolet interference lithography
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10.1116/1.2799974
/content/avs/journal/jvstb/25/6/10.1116/1.2799974
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2799974

Figures

Image of FIG. 1.
FIG. 1.

Cr diffraction gratings manufactured on membranes by e-beam lithography with periods of (a) 70 and (b) .

Image of FIG. 2.
FIG. 2.

Layout of a diffraction grating mask for four-beam interference lithography. When such a mask is illuminated at normal incidence by a spatially coherent beam, diffracted beams originating from the four gratings overlap at a certain distance from the mask and form an interference pattern. The horizontal and vertical gratings may have different periods, and as shown in the layout.

Image of FIG. 3.
FIG. 3.

SEM images of dot-array patterns in calixarene resist after development in xylene. The periods of the patterns are (a) 49.5, (b) 42.4, and (c) . The scale bars are long.

Image of FIG. 4.
FIG. 4.

SEM images of dot-array patterns in calixarene resist after development in IPA. The periods of the patterns are (a) 31.8 and (b) . The scale bars are long.

Image of FIG. 5.
FIG. 5.

SEM images of dot-array patterns in HSQ. The periods of the patterns are (a) 49.5 and (b) . The scale bars are long.

Image of FIG. 6.
FIG. 6.

Hole-array patterns in calixarene. (a) A square array with period. (b) Array with periods of 30 and in the vertical and horizontal directions, respectively.

Tables

Generic image for table
TABLE I.

Analysis results for the dot-array image shown in Fig. 3(b) along the directions shown in the same image.

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/content/avs/journal/jvstb/25/6/10.1116/1.2799974
2007-12-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bit-array patterns with density over 1Tbit∕in.2 fabricated by extreme ultraviolet interference lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2799974
10.1116/1.2799974
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