Schematics showing structural and processing characteristics of pixelated photoresists compared with nonpixelated photoresists.
(a) Scheme showing chemical transformation from to by UV or x-ray exposure and PEB. (b) FTIR spectra of photoresists I-A and II-A obtained before exposure (◼, ●), and after exposure and PEB (◻, ○). (c) Plot of the film thickness of deprotected photoresists I-A (◻) and II-A (○) as a function of the development time (developer: TMAH solution).
Plan-view SEM images of asymmetric diblock copolymer photoresists containing PAGs: (a) II-A, (b) II-B, and (c) II-C. [Inset of (b): Cross-sectional SEM image of spherical morphology obtained from copolymer II-B photoresist containing PAGs.] (d) Plan-view SEM image of pure block copolymer II-B without PAGs.
(a) Schematic showing the expected edge structures from sphere-forming block copolymer photoresists. (b) SEM images of line-patterned photoresist II-A. AFM and plan-view SEM images of block copolymer photoresists (c) II-A, (d) II-B, and (e) II-C obtained in the edges of the patterns. (c) AFM images and [(d) and (e)] AFM (left) and SEM (right) images.
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