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Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness
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10.1116/1.2800330
/content/avs/journal/jvstb/25/6/10.1116/1.2800330
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2800330
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Figures

Image of FIG. 1.
FIG. 1.

Schematics showing structural and processing characteristics of pixelated photoresists compared with nonpixelated photoresists.

Image of FIG. 2.
FIG. 2.

(a) Scheme showing chemical transformation from to by UV or x-ray exposure and PEB. (b) FTIR spectra of photoresists I-A and II-A obtained before exposure (◼, ●), and after exposure and PEB (◻, ○). (c) Plot of the film thickness of deprotected photoresists I-A (◻) and II-A (○) as a function of the development time (developer: TMAH solution).

Image of FIG. 3.
FIG. 3.

Plan-view SEM images of asymmetric diblock copolymer photoresists containing PAGs: (a) II-A, (b) II-B, and (c) II-C. [Inset of (b): Cross-sectional SEM image of spherical morphology obtained from copolymer II-B photoresist containing PAGs.] (d) Plan-view SEM image of pure block copolymer II-B without PAGs.

Image of FIG. 4.
FIG. 4.

(a) Schematic showing the expected edge structures from sphere-forming block copolymer photoresists. (b) SEM images of line-patterned photoresist II-A. AFM and plan-view SEM images of block copolymer photoresists (c) II-A, (d) II-B, and (e) II-C obtained in the edges of the patterns. (c) AFM images and [(d) and (e)] AFM (left) and SEM (right) images.

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/content/avs/journal/jvstb/25/6/10.1116/1.2800330
2007-12-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2800330
10.1116/1.2800330
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