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Effects of photoacid generator incorporation into the polymer main chain on chemically amplified resist behavior and lithographic performance
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10.1116/1.2801868
/content/avs/journal/jvstb/25/6/10.1116/1.2801868
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801868
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structures and compositions of polymer-bound PAG and blended-PAG resists.

Image of FIG. 2.
FIG. 2.

(a) Contrast curves and (b) the corresponding acid concentrations for the polymer-bound PAG and blended-PAG resists using DUV exposure.

Image of FIG. 3.
FIG. 3.

SEM images of patterned resist films: minimum isolated space pattern achieved on (A) GE blend F4-IBBS.TPS and (B) GE-F4-MBS.TPS, and minimum 1:1 line-space patterns achieved on (C) GE blend F4-IBBS.TPS and (D)GE-F4-MBS.TPS.

Image of FIG. 4.
FIG. 4.

Power spectrum of the minimum half-pitch patterns of GE-F4-MBS.TPS and GE blend F4-IBBS.TPS .

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/content/avs/journal/jvstb/25/6/10.1116/1.2801868
2007-12-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of photoacid generator incorporation into the polymer main chain on 193nm chemically amplified resist behavior and lithographic performance
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801868
10.1116/1.2801868
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