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Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers
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10.1116/1.2801870
/content/avs/journal/jvstb/25/6/10.1116/1.2801870
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801870

Figures

Image of FIG. 1.
FIG. 1.

(a) Two step exposure in Lloyd’s mirror IL setup. The sample is rotated an arbitrary angle to obtain different motifs with feature size in the sub- range. (b) Photograph of Lloyd’s mirror device.

Image of FIG. 2.
FIG. 2.

(a) Array of holes FWHM and deep developed in HSQ with a high dose illumination. (b) Array of nanodots obtained with low dose illumination. (c) Two dimensional Fourier transform of the image (a) showing only significant contributions at the hole spacing spatial frequency and its harmonics.

Image of FIG. 3.
FIG. 3.

Modulation depth for an array of holes with period as a function of the developing time for different doses.

Tables

Generic image for table
TABLE I.

Final photoresist thickness obtained for different HSQ concentrations and spinning parameters.

Generic image for table
TABLE II.

Modulation depth, measured as the difference between the maximum and minimum heights in the photoresist surface for different HSQ concentrations and photon doses.

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/content/avs/journal/jvstb/25/6/10.1116/1.2801870
2007-12-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801870
10.1116/1.2801870
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