Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers
(a) Two step exposure in Lloyd’s mirror IL setup. The sample is rotated an arbitrary angle to obtain different motifs with feature size in the sub- range. (b) Photograph of Lloyd’s mirror device.
(a) Array of holes FWHM and deep developed in HSQ with a high dose illumination. (b) Array of nanodots obtained with low dose illumination. (c) Two dimensional Fourier transform of the image (a) showing only significant contributions at the hole spacing spatial frequency and its harmonics.
Modulation depth for an array of holes with period as a function of the developing time for different doses.
Final photoresist thickness obtained for different HSQ concentrations and spinning parameters.
Modulation depth, measured as the difference between the maximum and minimum heights in the photoresist surface for different HSQ concentrations and photon doses.
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