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Exploring the manufacturability of using block copolymers as resist materials in conjunction with advanced lithographic tools
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10.1116/1.2801888
/content/avs/journal/jvstb/25/6/10.1116/1.2801888
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801888
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the process used to fabricate chemically nanopatterned surfaces that direct the self-assembly of ternary blends in linear and bend geometries.

Image of FIG. 2.
FIG. 2.

Directed assembly of PS--PMMA on a rectangle. Six subsections within the large-area assembly are magnified to show details of the lamellar structure.

Image of FIG. 3.
FIG. 3.

Demonstration of domain size and period control of directed assembly of . (a) Variation in copolymer spacing period to match values ranging from . (b) Uniformity of copolymer domain width over constant chemical nanopatterns with variations of linewidth ranging from 20% smaller to 30% larger than the median value of . (c) Results of SCMF simulations of block copolymer thin films on chemically patterned substrates with varying . Three-dimensional snapshot (large) and two-dimensional contour plots (inset) of SCMF simulations with , 0.45, and 0.65, from left to right, and . Red domains are PS and blue domains are PMMA.

Image of FIG. 4.
FIG. 4.

Examples of methods to create line and space patterns using block copolymers at low cost. (a) Method that utilizes topographically induced assembly of domains. [(b)–(d)] Methods that utilize directed assembly of domains on chemical patterns formed from an interference grating. All four methods combine, in various orders, the formation of interference gratings, standard projection pattern, and either topographically induced or chemically induced directed assembly of block copolymer microdomains.

Image of FIG. 5.
FIG. 5.

Schematics of the essential set of features required for integrated circuit fabrication (as defined by the NRI and semiconductor industry companies) and top-down SEM images of the corresponding self-assembled PS/PMMA device-oriented geometries. The top row (from left to right) shows dense array structures such as 60° bends, arcs, T junctions, nested jogs, and isolated jogs. The bottom row (from left to right) displays dense periodic arrays of contact openings, lines that end at a specific position, and isolated features including five, two, and one segments that are in length. The PMMA domains are shown in dark gray, while the PS domains are shown in light gray or white.

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/content/avs/journal/jvstb/25/6/10.1116/1.2801888
2007-12-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Exploring the manufacturability of using block copolymers as resist materials in conjunction with advanced lithographic tools
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801888
10.1116/1.2801888
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