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Fabrication of half-pitch silicon lines by single-exposure self-aligned spatial-frequency doubling
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10.1116/1.2801889
/content/avs/journal/jvstb/25/6/10.1116/1.2801889
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801889
/content/avs/journal/jvstb/25/6/10.1116/1.2801889
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/content/avs/journal/jvstb/25/6/10.1116/1.2801889
2007-12-07
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of 22nm half-pitch silicon lines by single-exposure self-aligned spatial-frequency doubling
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2801889
10.1116/1.2801889
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