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B clustering in amorphous Si
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10.1116/1.2781760
/content/avs/journal/jvstb/26/1/10.1116/1.2781760
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2781760
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Boron concentration profiles of as-implanted sample (dashed line) and the sample annealed at (continuous line) (left log scale). Normalized RBS channeling yield vs depth for the as-implanted sample (squares), for the samples annealed for (circles), annealed (triangles). Measurements on bare silicon samples are also reported (stars). All channeling data are referred to the right linear scale.

Image of FIG. 2.
FIG. 2.

XANES spectra of four low energy B implanted preamorphized samples with different thermal treatments. The main features are marked by dashed lines.

Image of FIG. 3.
FIG. 3.

Boron concentration profiles in amorphous silicon after annealing at for different times.

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/content/avs/journal/jvstb/26/1/10.1116/1.2781760
2008-01-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: B clustering in amorphous Si
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2781760
10.1116/1.2781760
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