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Boron cathodic arc as an ion source for shallow junction ion implantation of boron
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic representation of a boron cathodic arc system similar to that used in the present experiments. The main difference is that the proposed wafer manipulator, intended to suggest the application goal, does not exist. The target samples were actually positioned at the desired distance from the filter by use of a manipulator that feeds in from the right hand end.

Image of FIG. 2.
FIG. 2.

Passage of plasma through the filter (Ref. 6). The unfiltered plume of about of boron enters at about 9 o’clock. The filtered plume of about exits at about 2 o’clock. Then, the filtered plume is rechanneled in the original direction by magnetic ducting (see Fig. 1). The baffle system is not shown.

Image of FIG. 3.
FIG. 3.

Ion backsckattering analysis results for incident He ions for an uncoated CoCrMo sample and for a boron coated sample. Scattering angle is 170°. The three ledges in front between about 3.5 and represent Rutherford scattering for Mo, Co, and Cr, respectively, for decreasing energies. The markers indicate the atomic resolution in the lower-energy range.

Image of FIG. 4.
FIG. 4.

Boron concentration vs depth by SIMS for the three low-energy ion implantations of crystalline Si, in comparison with results from ClusterBoron™ and traditional beam line implantation. Comparison results are from Ref. 18.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron cathodic arc as an ion source for shallow junction ion implantation of boron