He implantation to control B diffusion in crystalline and preamorphized Si
Chemical B profiles after MBE growth (continuous lines) and after thermal annealing at for (line plus closed circles) and (line plus open circles) in a sample implanted with He, (a) and in a He-free sample (b). The XTEM image of the He-implanted sample after for is also reported as a background of panel (a). Panel (c) shows the enhancement of B diffusivity at the B deltas with respect to the equilibrium one, where is calculated in the He-free sample.
The low-momentum parameter as a function of positron implantation energy in samples implanted only with He with doses of (closed circles) and (open circles) and subjected to annealing at for , as before. The parameter has been normalized to the value in the substrate far from the surface (closed squares, ), and the mean positron implantation depth has also been included in the figure (top scale). The parameter in a sample implanted both with He and with B ( He, and B, ) is also shown (open down triangles).
Chemical profiles of a B delta grown by MBE after amorphization and SPE (continuous line) and after the further annealing at in a He-implanted (, , open circles) sample and in a He-free sample (closed circles), respectively. The upper inset of the figure is a schematic of the experiment in PA-Si, while the lower one shows the EOR defects in the He-implanted and He-free samples.
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