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Interaction of the end of range defect band with the upper buried oxide interface for B and implants in Si and silicon on insulator with and without preamorphizing implant
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10.1116/1.2816936
/content/avs/journal/jvstb/26/1/10.1116/1.2816936
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2816936
/content/avs/journal/jvstb/26/1/10.1116/1.2816936
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/content/avs/journal/jvstb/26/1/10.1116/1.2816936
2008-01-31
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2816936
10.1116/1.2816936
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