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Interaction of the end of range defect band with the upper buried oxide interface for B and implants in Si and silicon on insulator with and without preamorphizing implant
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10.1116/1.2816936
/content/avs/journal/jvstb/26/1/10.1116/1.2816936
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2816936

Figures

Image of FIG. 1.
FIG. 1.

Internal sample structure of self-amorphizing BF2 implant and Ge preamorphized Si after SPER.

Image of FIG. 2.
FIG. 2.

comparison of implants with and without preamorphizing implant into bulk Si and SOI after annealing in ambient.

Image of FIG. 3.
FIG. 3.

comparison of B implants with preamorphizing implant into bulk Si and SOI after annealing in ambient.

Image of FIG. 4.
FIG. 4.

comparison of B and implants with and without preamorphizing implant into bulk Si and SOI after annealing in ambient.

Image of FIG. 5.
FIG. 5.

Cross-sectional transmission electron microscopy of as-implanted implants into SOI.

Tables

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TABLE I.

Experimental implantation conditions.

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/content/avs/journal/jvstb/26/1/10.1116/1.2816936
2008-01-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2816936
10.1116/1.2816936
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