GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
(a) Typical characteristic for device A measured under cw operation, where the cavity length is and stripe width is . The inset gives the lasing spectra just above threshold. (b) Room temperature PL and lasing spectra for device D. Inset gives pulsed threshold current vs temperature from , which is used to extract .
(a) Schematic drawing of an ETR with an outcoupling waveguide. The arrows indicate the propagation of longitudinal modes in the folded cavity. (b) Schematic diagram of the corresponding Fabry-Pérot cavity with an unfolded light ray; both wave vectors and in the longitudinal and lateral directions are shown.
(a) Calculated wavelength of the fundamental, first, and second order modes in a side length ETR. (b) Calculated factors of the fundamental, first, and second order modes.
(a) The integrated laser spectrum intensity vs injection current for a mid-IR ETR laser with a side length; bottom-right inset shows the laser spectrum just below threshold and just above threshold ; top-left inset shows the multimode laser spectrum under high injection. (b) Normalized laser spectra under different injection conditions; inset gives lasing wavelength vs injection current.
Lasing wavelength tuning vs temperature for a short cavity device .
A summary of active region structures and characterization results for devices A, B, C, and D; all measurements were done under pulsed operation. (Notation: is the band gap energy of the QW material; is the conduction/valence band discontinuity between the QW barrier and the QW; is the device cavity length/stripe width; is the threshold current density; is the maximum lasing temperature; and is the characteristic temperature.)
Article metrics loading...
Full text loading...