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Soft photocurable nanoimprint lithography for compound semiconductor nanostructures
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10.1116/1.2823035
/content/avs/journal/jvstb/26/1/10.1116/1.2823035
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2823035
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the soft photocurable nanoimprint lithography technique. The diagram shows how the pattern is transferred from a silicon master to photoresist atop a desired substrate, via the intermediate step of a PDMS mold. The substrates used in this study are silicon dioxide atop GaAs pieces, which are sketched in the diagram (silicon dioxide is indicated by 45° hatching).

Image of FIG. 2.
FIG. 2.

Atomic force micrographs showing GaAs patterned with holes ( pitch). Each white bar is long; (a) shows a scan of the silicon master, (b) shows the imprinted photoresist after UV exposure and removal of PDMS mold, and (c) shows the patterned GaAs after stripping all masking materials.

Image of FIG. 3.
FIG. 3.

Scanning electron micrographs of GaAs patterned with holes, after stripping of all masking materials; (a) shows GaAs patterned with wet etching, as above, while (b) shows GaAs patterned using RIE with plasma. Each white bar is long.

Image of FIG. 4.
FIG. 4.

Atomic force micrograph of holes in GaAs by wet etching. The image is on a side. Total patterned area extends over a few . The white bar is long.

Image of FIG. 5.
FIG. 5.

Patterning of pitch lines by soft NIL, each white bar is long; (a) shows an atomic force micrograph of the master, while (b) shows a scanning electron micrograph of the lines patterned into GaAs by wet etching after stripping of all masking materials.

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/content/avs/journal/jvstb/26/1/10.1116/1.2823035
2008-01-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Soft photocurable nanoimprint lithography for compound semiconductor nanostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2823035
10.1116/1.2823035
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