Diagram of the soft photocurable nanoimprint lithography technique. The diagram shows how the pattern is transferred from a silicon master to photoresist atop a desired substrate, via the intermediate step of a PDMS mold. The substrates used in this study are silicon dioxide atop GaAs pieces, which are sketched in the diagram (silicon dioxide is indicated by 45° hatching).
Atomic force micrographs showing GaAs patterned with holes ( pitch). Each white bar is long; (a) shows a scan of the silicon master, (b) shows the imprinted photoresist after UV exposure and removal of PDMS mold, and (c) shows the patterned GaAs after stripping all masking materials.
Scanning electron micrographs of GaAs patterned with holes, after stripping of all masking materials; (a) shows GaAs patterned with wet etching, as above, while (b) shows GaAs patterned using RIE with plasma. Each white bar is long.
Atomic force micrograph of holes in GaAs by wet etching. The image is on a side. Total patterned area extends over a few . The white bar is long.
Patterning of pitch lines by soft NIL, each white bar is long; (a) shows an atomic force micrograph of the master, while (b) shows a scanning electron micrograph of the lines patterned into GaAs by wet etching after stripping of all masking materials.
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