Ray diagram of formation of off-axis TEM hologram. Plane waves traveling away from the sample (solid lines) and through the sample (dashed lines) interfere in the image plane when a dc voltage is applied to biprism.
Reconstructed amplitude (a), potential (b), and line profiles across junction (c). The profile of potential before flattening was offset so that minima of both profiles are the same.
Amplitude (a), potential (b), and comparison of line profiles as derived from SIMS and holography (c). Potential map was rotated during reconstruction. The origin is at top Si surface.
Reconstructed amplitude (a), potential (b), and depth profiles of potential from SIMS and holography (c). Spatial resolution is . Potential map was rotated during reconstruction. The origin corresponds to top Si surface.
As concentration profiles after a series of different annealings (a) and conventional TEM image of -FET device (b).
Phase map of -FET device after RTA (a) and (b). Comparison of lateral profiles derived from phase maps (c). Spatial resolution is .
Conventional TEM image of -FET device (a). The end-of-range defects are arrowed. The active device regions are delineated in the electrostatic potential map (b).
Conventional TEM image (a), amplitude map (b) and potential map (c). SP1 and SP2 denote oxide and nitride spacers, respectively. Spatial resolution in (b) and (c) is .
The sketch of -FET device. Distances , , , and are depth and lateral extent of diffusion for extension and source/drain implant, respectively.
Boron depletion near STI. Amplitude map (a) and potential map (b). The depleted region is arrowed in the potential map. Spatial resolution is .
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