1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Application of electron holography to analysis of submicron structures
Rent:
Rent this article for
USD
10.1116/1.2834558
/content/avs/journal/jvstb/26/1/10.1116/1.2834558
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2834558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ray diagram of formation of off-axis TEM hologram. Plane waves traveling away from the sample (solid lines) and through the sample (dashed lines) interfere in the image plane when a dc voltage is applied to biprism.

Image of FIG. 2.
FIG. 2.

Reconstructed amplitude (a), potential (b), and line profiles across junction (c). The profile of potential before flattening was offset so that minima of both profiles are the same.

Image of FIG. 3.
FIG. 3.

Amplitude (a), potential (b), and comparison of line profiles as derived from SIMS and holography (c). Potential map was rotated during reconstruction. The origin is at top Si surface.

Image of FIG. 4.
FIG. 4.

Reconstructed amplitude (a), potential (b), and depth profiles of potential from SIMS and holography (c). Spatial resolution is . Potential map was rotated during reconstruction. The origin corresponds to top Si surface.

Image of FIG. 5.
FIG. 5.

As concentration profiles after a series of different annealings (a) and conventional TEM image of -FET device (b).

Image of FIG. 6.
FIG. 6.

Phase map of -FET device after RTA (a) and (b). Comparison of lateral profiles derived from phase maps (c). Spatial resolution is .

Image of FIG. 7.
FIG. 7.

Conventional TEM image of -FET device (a). The end-of-range defects are arrowed. The active device regions are delineated in the electrostatic potential map (b).

Image of FIG. 8.
FIG. 8.

Conventional TEM image (a), amplitude map (b) and potential map (c). SP1 and SP2 denote oxide and nitride spacers, respectively. Spatial resolution in (b) and (c) is .

Image of FIG. 9.
FIG. 9.

The sketch of -FET device. Distances , , , and are depth and lateral extent of diffusion for extension and source/drain implant, respectively.

Image of FIG. 10.
FIG. 10.

Boron depletion near STI. Amplitude map (a) and potential map (b). The depleted region is arrowed in the potential map. Spatial resolution is .

Loading

Article metrics loading...

/content/avs/journal/jvstb/26/1/10.1116/1.2834558
2008-02-01
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Application of electron holography to analysis of submicron structures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/1/10.1116/1.2834558
10.1116/1.2834558
SEARCH_EXPAND_ITEM