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Energy exchange in field emission from semiconductors
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10.1116/1.2822944
/content/avs/journal/jvstb/26/2/10.1116/1.2822944
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/2/10.1116/1.2822944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy distribution of field electrons at several for . For high , higher energy states are more occupied and then contribute more to tunneling.

Image of FIG. 2.
FIG. 2.

Energy distribution of replacement electrons at several for . For high , the thermal excitation increases the product of probabilities of occupation and evacuation for high energies.

Image of FIG. 3.
FIG. 3.

Energy distribution of field electrons at several for . For strong such that the barrier is lowered and thinned, the low energy states make major contributions to field emission because of large population.

Image of FIG. 4.
FIG. 4.

Energy distribution of replacement electrons at several for . Even strong does not make a noticeable change in the product of probabilities of occupation and evacuation.

Image of FIG. 5.
FIG. 5.

vs for . The energy exchange (solid lines) is the difference between (dashed lines) and (dotted lines). Circles and triangles stand for the values obtained from their analytic expressions.

Image of FIG. 6.
FIG. 6.

vs for . For weak , thermally excited electrons contribute a lot to field emission which means larger (dashed lines). This yields larger (solid lines). Circles and triangles stand for the values obtained from their analytic expressions.

Image of FIG. 7.
FIG. 7.

vs for . has similar feature to that for but is one order smaller. Circles and triangles stand for the values obtained from their analytic expressions.

Image of FIG. 8.
FIG. 8.

vs for . It is seen that has no considerable dependence on and . Circles and triangle stand for the values obtained from their analytic expressions.

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/content/avs/journal/jvstb/26/2/10.1116/1.2822944
2008-04-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy exchange in field emission from semiconductors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/2/10.1116/1.2822944
10.1116/1.2822944
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