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Electroluminescence of silicon nanoclusters excited by tunneling carrier injection
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10.1116/1.2830626
/content/avs/journal/jvstb/26/2/10.1116/1.2830626
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/2/10.1116/1.2830626
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Figures

Image of FIG. 1.
FIG. 1.

(a) Plan view observation by transmission electron microscope (TEM) of a sample containing silicon nanocrystallites embedded in a matrix. See Ref. 12 for more detail. (b) Photoluminescence of silicon nanocrystallites prepared by thermal annealing of Si-rich silicon oxide.

Image of FIG. 2.
FIG. 2.

Schematic view of the proposed electroluminescence model: (a) Cross-sectional sketch of a dielectric embedded nanocrystallites showing a possible path of the carrier transportation via tunneling mechanisms; (b) sketch of the energy band diagram of a fragment from a tunneling chain.

Image of FIG. 3.
FIG. 3.

Carrier population in the silicon nanocrysallites of a long chain subject to an internal field of .

Image of FIG. 4.
FIG. 4.

(a) Plot of the total recombination rate computed for a long chain subject to an internal field of . (b) Plots of the recombination rate in the Si-NC of the chain considered in panel (a), which is closest to the anode, as a function of the internal field in the dielectric matrix, for three values of the Si-NC interspacing.

Image of FIG. 5.
FIG. 5.

(a) Total recombination rate computed for a long chain of Si-NCs as a function of the internal field in the dielectric matrix, for three values of the NC interspacing, and (b) as a function of the linear density of NCs.

Image of FIG. 6.
FIG. 6.

Total dissipated power by a long chain of NCs as a function of the internal field in the dielectric matrix, for three values of the NC interspacing.

Image of FIG. 7.
FIG. 7.

Total radiation rate vs total dissipated power for a long chain subject to an internal field of , as a function of the linear density of the Si-NCs. For an opportunity interval between 0.15 and 0.18 it can be seen that the recombination rate takes relatively high values on the expense of a low total dissipated power.

Image of FIG. 8.
FIG. 8.

Current density through a long chain of Si-NCs as a function of the internal field in the dielectric matrix, for three values of the Si-NC interspacing.

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/content/avs/journal/jvstb/26/2/10.1116/1.2830626
2008-04-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence of silicon nanoclusters excited by tunneling carrier injection
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/2/10.1116/1.2830626
10.1116/1.2830626
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