(a) SEM image of holes formed in negative photoresist using interferometric lithography. (b) Flow demonstrating large scale patterning of IL patterned resist in a mix-and-match exposure.
SEM images of representative silicon pillar matrices demonstrating the range of available aspect ratios.
Examples of silicon pillar matrix before and after stripping the ARC/chrome cap.
Sequence of interstitial fill and etch back. (a) represents the overfilled pillar matrix, while (b), (c), and (d) represent 35, 40, and etches in 20:1 BOE.
SEM images of examples of three different suspended perforated films: (a) siloxane spin on glass film, (b) SU-8 film, and (c) evaporated chromium film.
Article metrics loading...
Full text loading...