strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions
Band diagram and wavefunctions for the e1 and hh1 subbands of the single strain-balanced quantum well.
(a) PL spectra and (b) EL spectra of MD3QW sample at room temperature. The PL emission peak is located at with a FWHM of . The EL spectra show a higher optical gain for e1-hh2 transition at than the e1-hh1 transition at .
(a) characteristics and (b) lasing spectra of Fabry-Pérot (FP)-type ridge laser with waveguide and operated at . The is and the slope efficiency is per facet. Lasing peaks at 1514, 1528, and are observed at injection .
(a) characteristics and (b) lasing spectra of tilted-end-facet (TEF, )-type ridge laser of and operated at . The is and the slope efficiency is per facet. The laser spectrum maintains a single-peak emission at under injection current.
Photocurrent spectrum measured at zero bias. The -like absorption peaks are consistent with the lasing wavelengths.
Details of the strain-balanced single quantum well. (: compressive strain, : tensile strain, : lattice match)
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