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strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions
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10.1116/1.2898494
/content/avs/journal/jvstb/26/3/10.1116/1.2898494
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2898494

Figures

Image of FIG. 1.
FIG. 1.

Band diagram and wavefunctions for the e1 and hh1 subbands of the single strain-balanced quantum well.

Image of FIG. 2.
FIG. 2.

(a) PL spectra and (b) EL spectra of MD3QW sample at room temperature. The PL emission peak is located at with a FWHM of . The EL spectra show a higher optical gain for e1-hh2 transition at than the e1-hh1 transition at .

Image of FIG. 3.
FIG. 3.

(a) characteristics and (b) lasing spectra of Fabry-Pérot (FP)-type ridge laser with waveguide and operated at . The is and the slope efficiency is per facet. Lasing peaks at 1514, 1528, and are observed at injection .

Image of FIG. 4.
FIG. 4.

(a) characteristics and (b) lasing spectra of tilted-end-facet (TEF, )-type ridge laser of and operated at . The is and the slope efficiency is per facet. The laser spectrum maintains a single-peak emission at under injection current.

Image of FIG. 5.
FIG. 5.

Photocurrent spectrum measured at zero bias. The -like absorption peaks are consistent with the lasing wavelengths.

Tables

Generic image for table
TABLE I.

Details of the strain-balanced single quantum well. (: compressive strain, : tensile strain, : lattice match)

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/content/avs/journal/jvstb/26/3/10.1116/1.2898494
2008-05-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAlAs∕InGaAs strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2898494
10.1116/1.2898494
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