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Molecular beam epitaxy growth of InAs and channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications
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View: Figures


Image of FIG. 1.
FIG. 1.

Measured surface phase diagram of InAs using RHEED. The solid squares are the measured As beam equivalent pressure at which the InAs surface reconstruction changed from As rich to In rich . The star indicates the growth conditions for the InAs wetting layer used to optimize the surface morphology.

Image of FIG. 2.
FIG. 2.

RHEED pattern during the InAs wetting layer growth at the film thickness of (a) , (b) , and (c) . This sequence of images indicates a progression from two dimensional (2D) wetting to three dimensional neucleation to 2D growth within just a few nanometers.

Image of FIG. 3.
FIG. 3.

AFM image of the surface of the epitaxially grown InAs using the wetting layer.

Image of FIG. 4.
FIG. 4.

Optical microscope image of the epitaxially grown InAs.

Image of FIG. 5.
FIG. 5.

(a) TEM cross-sectional images and (b) diffraction pattern in GaAs substrate at (c) interface, and (d) inside InAs epilayer. The images show how the wetting layer confines the defects to the first few nanometers over which the RHEED transition takes place in Fig. 2. The diffraction patterns show a relaxed film at the interface.

Image of FIG. 6.
FIG. 6.

Designed and fabricated MOSFET structure.

Image of FIG. 7.
FIG. 7.

Measured MOSFET characteristics including (a) (drain current)- (drain voltage) curves from with step from the bottom to the top, and (b) and (transconductance)- curves at .

Image of FIG. 8.
FIG. 8.

Extracted MOSFET channel mobility vs carrier concentration.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications