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Molecular beam epitaxy growth of InAs and channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications
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10.1116/1.2912086
/content/avs/journal/jvstb/26/3/10.1116/1.2912086
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2912086
/content/avs/journal/jvstb/26/3/10.1116/1.2912086
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/content/avs/journal/jvstb/26/3/10.1116/1.2912086
2008-05-30
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2912086
10.1116/1.2912086
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