Observation and control of electrochemical etching effects in the fabrication of heterostructure devices
Schematic cross section of the device structure used as the basis for the etching study.
SEM micrographs of the cross-sectional profiles of the etched heterojunctions along the  and crystal directions for samples with different surface layers. (a) and (b) are for -mask control sample, (c) and (d) are for a mask, and (e) and (f) are for a mask.
Etch depth of the Sb-bearing layers from surface profilometer measurements as a function of etching time for selected mask materials.
Vertical and lateral etch rates of Sb-bearing materials in dilute ammonium hydroxide solution for nonconducting mask and metal mask with different surface metals.
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