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Observation and control of electrochemical etching effects in the fabrication of heterostructure devices
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10.1116/1.2924328
/content/avs/journal/jvstb/26/3/10.1116/1.2924328
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2924328

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the device structure used as the basis for the etching study.

Image of FIG. 2.
FIG. 2.

SEM micrographs of the cross-sectional profiles of the etched heterojunctions along the [110] and crystal directions for samples with different surface layers. (a) and (b) are for -mask control sample, (c) and (d) are for a mask, and (e) and (f) are for a mask.

Image of FIG. 3.
FIG. 3.

Etch depth of the Sb-bearing layers from surface profilometer measurements as a function of etching time for selected mask materials.

Tables

Generic image for table
TABLE I.

Vertical and lateral etch rates of Sb-bearing materials in dilute ammonium hydroxide solution for nonconducting mask and metal mask with different surface metals.

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/content/avs/journal/jvstb/26/3/10.1116/1.2924328
2008-05-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation and control of electrochemical etching effects in the fabrication of InAs∕AlSb∕GaSb heterostructure devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/3/10.1116/1.2924328
10.1116/1.2924328
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