Schematic cross section of the device structure used as the basis for the etching study.
SEM micrographs of the cross-sectional profiles of the etched heterojunctions along the  and crystal directions for samples with different surface layers. (a) and (b) are for -mask control sample, (c) and (d) are for a mask, and (e) and (f) are for a mask.
Etch depth of the Sb-bearing layers from surface profilometer measurements as a function of etching time for selected mask materials.
Vertical and lateral etch rates of Sb-bearing materials in dilute ammonium hydroxide solution for nonconducting mask and metal mask with different surface metals.
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