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(a) SEM image of a typical device. (b) Conductance vs at . Three transport regimes can be identified according to the transparency of the device which increases with . (c) Stability diagram measured at (darker—less conductive). Dashed lines indicate the Coulomb blockade diamonds, every second of which exhibits a zero-bias Kondo ridge. (d) As (c) but measured at where the leads have turned superconducting. A low-bias double peak structure is observed throughout the region.
(a) Low-bias stability diagram showing the details of the subgap peaks. (b) vs through the middle of the CB diamonds at (left) and (right). (c) Schematic of the processes responsible for peaks observed at (top) and (bottom). (d) Temperature dependence of the subgap peaks (symbols) and fits expected for simple Andreev tunneling (red lines). (e) Stability diagram for a different device: the blue arrows points to CB diamonds with Kondo ridges surviving the transition to superconducting leads. Black and red arrows indicate 12 CB diamonds exhibiting the enhanced peak [red arrow indicate the diamond of the measurement in (d)].
(a) Schematic layout nanowire devices with local gate control. (b) False color SEM image of a representative device. Local gates are wide and the pitch is . [(c) and (d)] Schematic of the nanowire conduction band realizing, in two different ways, an electrostatically defined DQD in the wire by means of the three gates (see text). (e) Linear conductance of the device at as a function of for four different values of (, curve offset for clarity).
(a) Linear conductance through a locally gated InAs nanowire as a function and for , and . The high-conductance regions creates a clear honeycomb lattice characteristic of a double quantum dot. (b) As in (a) but with , and . The diagonal lines show that the two gates couples to a single dot (see text). (c) Schematic of one of the honeycomb hexagons illustrating the electron configuration.
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