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Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
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10.1116/1.2918329
/content/avs/journal/jvstb/26/4/10.1116/1.2918329
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2918329

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross sectional diagram of the ZnO-based TFT structure. (b) A top view of the ZnO-based TFT device configuration.

Image of FIG. 2.
FIG. 2.

XRD spectra of the ZnO thin films deposited at various oxygen partial pressures. The inset graph shows the variation of grain size ZnO thin films with increasing oxygen partial pressure.

Image of FIG. 3.
FIG. 3.

O spectrum on the surface of ZnO thin film deposited at oxygen partial pressure 40%; and peaks denote oxygen vacancy within matrix and stoichiometric oxygen within matrix, respectively. The inset graph shows the variation of oxygen vacancy of ZnO thin films with increasing oxygen partial pressure.

Image of FIG. 4.
FIG. 4.

Typical ZnO-based TFT output characteristics with the ZnO channel layer deposited at various oxygen partial pressures: (a) 0%, (b) 15%, and (c) 40%.

Image of FIG. 5.
FIG. 5.

Typical ZnO-based TFT transfer characteristics with the ZnO channel layer deposited at various oxygen partial pressures: (a) 0%, (b) 15%, and (c) 40%.

Image of FIG. 6.
FIG. 6.

Experimentally extracted and as the corresponding turn on voltages with various gate voltages.

Tables

Generic image for table
TABLE I.

Resistivity of ZnO thin films deposited at various oxygen partial pressures.

Generic image for table
TABLE II.

Elemental composition ratio of zinc and oxygen atoms in thin films deposited at various oxygen partial pressures by RBS analysis.

Generic image for table
TABLE III.

Transistor parameters of ZnO TFTs with ZnO channel layers deposited oxygen partial pressure of 40%.

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/content/avs/journal/jvstb/26/4/10.1116/1.2918329
2008-08-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2918329
10.1116/1.2918329
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