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and molecular contacts to GaAs
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10.1116/1.2919159
/content/avs/journal/jvstb/26/4/10.1116/1.2919159
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2919159

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of some of the molecular layers fabricated. We also studied Ag and Pd metallizations without Au capping. A complete list is found in Table I.

Image of FIG. 2.
FIG. 2.

Corresponding STM and BEEM images of diodes obtained for a tunneling current of , tip bias of , scan areas (a) no molecular layer, BEEM current scale (b) C8DT and (c) C16MT, BEEM scale of . For the C8DT molecular layer, the BEEM signal is very weak and almost submerged in the background noise.

Image of FIG. 3.
FIG. 3.

Averaged BEEM spectra obtained with a constant tip current of for diodes as a function of molecular layer as indicated. Plot (a) is a larger scale showing the threshold region of plot (b). The thresholds are listed in Table I.

Image of FIG. 4.
FIG. 4.

Auger spectra of exposed to air.

Tables

Generic image for table
TABLE I.

Results from current-voltage and BEEM measurements as a function of diode structure. Listed are the sample evaporation run number, metal layer thicknesses, GaAs -type doping where doped epitaxial layer on substrate, is a bulk wafer, and is a bulk wafer, ideality factor , barrier height , STM tunneling observed, BEEM threshold voltage, BEEM/TIP current ratio measured at a tip bias of .

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/content/avs/journal/jvstb/26/4/10.1116/1.2919159
2008-08-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Au∕Ag and Au∕Pd molecular contacts to GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2919159
10.1116/1.2919159
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