SEM cross-sectional views of (a) the mask just after the CCP-RIE etching and (b) PhC holes after the plasma etching in an ICP-RIE system. (c) Magnified view on the hole sidewalls.
SEM cross-sectional views of PhC hole structures etched by plasmas with various ratios: (a) 14%, (b) 62%, and (c) 67%. The and mass flow rates are fixed at and .
Etch rates for wide trenches (square) and diameter PhC holes (triangle) etched by plasmas with either (a) various ratios ( and ) or (b) various ratios ( and ).
SEM cross-sectional views of PhC hole structures etched by plasmas with various ratios: (a) 0%, (b) 11%, and (c) 15%. The and mass flow rates are fixed at and .
Evolution of the positive ion current density with (a) the ICP power (empty triangle; ) and the total gas pressure (filled square; ) in a plasma, (b) the ratio (filled circle; and ) and the ratio (empty square; , and ) in a plasma with and .
SEM cross-sectional views of (a) a PhC hole structure and (b) an InP W1 PhC membrane waveguide after InGaAs selective wet etching. (c) Magnification on the InP membrane with PhC holes. The etching was performed in a plasma with , , and .
TEM images of etched PhC holes in heterostructure by a ICP plasma: (a) enlarged view of the PhC holes, (b) magnification on the sidewalls and the interface, and (c) magnification on the InP sidewall.
Time-resolved photoluminescence for InP PhC structures etched by either a or a plasma. The nonetched stack result is indicated for comparison (gray line).
Spectrally resolved transmission of a long InP W1 PhC suspended membrane waveguide etched by an ICP plasma.
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