Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
Schematic for atomic arrangement of 1 ML thick InN well inserted in a GaN matrix.
Temperature dependence of the growth rate of InN for both polarities.
Dependence of the InN growth rate on In beam flux for (a) In-polar and (b) N-polar epitaxies.
Schematics for atomic arrangement of (a) In-polar and (b) N-polar epitaxies.
Evolution of the lateral lattice constant of InN against the nominal InN surface coverage.
Surface morphology of In-polar InN epitaxy measured by AFM.
XRD patterns around GaN (0002) planes for samples grown at temperatures of (a) , (b) , and (c) under conditions of with GaN spacer layer and 1 ML InN supply with deposition rate of . As for the sample (d), the growth temperature was , but the total supply and deposition rate of InN were 3 ML and , respectively.
(a) XTEM dark field image for the sample grown at , of which XRD pattern is indicated in Fig. 1(b). The magnified image is shown in (b).
XTEM dark field image for the sample grown at , of which XRD pattern is indicated in Fig. 7(d).
Comparison of experimental and simulated XRD diffraction patterns of InN/GaN MQWs grown at , where (a) is for the same sample shown in Fig. 8 with 122 nm thick GaN spacer, and (b) is for newly grown sample without GaN spacer. The simulation was performed under following conditions; (a) almost fully strained 1 ML thick InN wells in 13.6 nm GaN barriers, and (b) almost fully strained 1 ML thick InN wells in 14.5 nm GaN barriers.
Growth temperature dependence of dislocation densities in the InN/GaN MQW structure. The circles are for edge components and the triangles for screw components.
Room temperature PL spectra of InN/GaN MQWs grown at under different InN deposition rates. (a) , (b) , and (c) , corresponding total InN supply of 1, 3, and 5 ML, respectively.
Electroluminescence spectrum for the preliminary LED sample made of novel structure InN/GaN MQWs with 1 ML InN wells in a GaN matrix.
Comparison of typical physical parameters in between InN/GaN and InAs/GaAs systems in the point of view for fabricating novel structure MQWs with ultrathin narrower band gap wells embedded in a wider band gap matrix. (: band gap energy,: exciton binding energy in bulk, : Bohr radius, (1 ML): exciton binding energy in the 1 ML QWs,: ratio of exciton binding energies between 1 ML QWs and bulk, : critical thickness).
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