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Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
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10.1116/1.2957620
/content/avs/journal/jvstb/26/4/10.1116/1.2957620
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2957620

Figures

Image of FIG. 1.
FIG. 1.

Schematic for atomic arrangement of 1 ML thick InN well inserted in a GaN matrix.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the growth rate of InN for both polarities.

Image of FIG. 3.
FIG. 3.

Dependence of the InN growth rate on In beam flux for (a) In-polar and (b) N-polar epitaxies.

Image of FIG. 4.
FIG. 4.

Schematics for atomic arrangement of (a) In-polar and (b) N-polar epitaxies.

Image of FIG. 5.
FIG. 5.

Evolution of the lateral lattice constant of InN against the nominal InN surface coverage.

Image of FIG. 6.
FIG. 6.

Surface morphology of In-polar InN epitaxy measured by AFM.

Image of FIG. 7.
FIG. 7.

XRD patterns around GaN (0002) planes for samples grown at temperatures of (a) , (b) , and (c) under conditions of with GaN spacer layer and 1 ML InN supply with deposition rate of . As for the sample (d), the growth temperature was , but the total supply and deposition rate of InN were 3 ML and , respectively.

Image of FIG. 8.
FIG. 8.

(a) XTEM dark field image for the sample grown at , of which XRD pattern is indicated in Fig. 1(b). The magnified image is shown in (b).

Image of FIG. 9.
FIG. 9.

XTEM dark field image for the sample grown at , of which XRD pattern is indicated in Fig. 7(d).

Image of FIG. 10.
FIG. 10.

Comparison of experimental and simulated XRD diffraction patterns of InN/GaN MQWs grown at , where (a) is for the same sample shown in Fig. 8 with 122 nm thick GaN spacer, and (b) is for newly grown sample without GaN spacer. The simulation was performed under following conditions; (a) almost fully strained 1 ML thick InN wells in 13.6 nm GaN barriers, and (b) almost fully strained 1 ML thick InN wells in 14.5 nm GaN barriers.

Image of FIG. 11.
FIG. 11.

Growth temperature dependence of dislocation densities in the InN/GaN MQW structure. The circles are for edge components and the triangles for screw components.

Image of FIG. 12.
FIG. 12.

Room temperature PL spectra of InN/GaN MQWs grown at under different InN deposition rates. (a) , (b) , and (c) , corresponding total InN supply of 1, 3, and 5 ML, respectively.

Image of FIG. 13.
FIG. 13.

Electroluminescence spectrum for the preliminary LED sample made of novel structure InN/GaN MQWs with 1 ML InN wells in a GaN matrix.

Tables

Generic image for table
TABLE I.

Comparison of typical physical parameters in between InN/GaN and InAs/GaAs systems in the point of view for fabricating novel structure MQWs with ultrathin narrower band gap wells embedded in a wider band gap matrix. (: band gap energy,: exciton binding energy in bulk, : Bohr radius, (1 ML): exciton binding energy in the 1 ML QWs,: ratio of exciton binding energies between 1 ML QWs and bulk, : critical thickness).

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/content/avs/journal/jvstb/26/4/10.1116/1.2957620
2008-08-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2957620
10.1116/1.2957620
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