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Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
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10.1116/1.2957620
/content/avs/journal/jvstb/26/4/10.1116/1.2957620
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2957620
/content/avs/journal/jvstb/26/4/10.1116/1.2957620
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/content/avs/journal/jvstb/26/4/10.1116/1.2957620
2008-08-13
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/4/10.1116/1.2957620
10.1116/1.2957620
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