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Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography
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10.1116/1.2966433
/content/avs/journal/jvstb/26/5/10.1116/1.2966433
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/5/10.1116/1.2966433

Figures

Image of FIG. 1.
FIG. 1.

Two types of block copolymer structure: (a) cylindrical and (b) lamellar.

Image of FIG. 2.
FIG. 2.

Patterning process with diblock copolymer nanostructure on silicon substrate: (a) PS-b-PMMA nanostructure formation, (b) after PMMA removal, and (c) after etching of underlying material.

Image of FIG. 3.
FIG. 3.

Plasma etcher with helicon plasma source and interferometry system for in situ etch rate measurement.

Image of FIG. 4.
FIG. 4.

(a) PS etch rate, (b) PMMA etch rate, (c) PS/PMMA etch rate ratio with different etch gas mixtures.

Image of FIG. 5.
FIG. 5.

Block copolymer samples etched with plasma of different chemistries: (a) Ar: rough and “swollen” PS, (b) : bumpy roughness on the top of PS domain. (c) : smooth surface and negligible CD loss,(d) , and (e) .

Image of FIG. 6.
FIG. 6.

AFM measurement of surface roughness of PS and PMMA blanket films etched with plasmas of different chemistries: (a) Ar, (b) , (c) , (d) , and (e) .

Image of FIG. 7.
FIG. 7.

etched PS film with bias voltage of (a) 0 V shows bumpy surface and of (b) 110 V with smooth surface.

Image of FIG. 8.
FIG. 8.

etched PMMA film with bias voltages of (a) 0 V and (b) 110 V show similar morphology.

Tables

Generic image for table
TABLE I.

Plasma parameters and ion saturation current density measurement.

Generic image for table
TABLE II.

Etch performance comparison.

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/content/avs/journal/jvstb/26/5/10.1116/1.2966433
2008-09-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/5/10.1116/1.2966433
10.1116/1.2966433
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