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Comparative study of ZrN and Zr–Ge–N thin films as diffusion barriers for Cu metallization on Si
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10.1116/1.2976571
/content/avs/journal/jvstb/26/5/10.1116/1.2976571
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/5/10.1116/1.2976571
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of as-deposited and annealed (a) (001) for and (b) (001) for .

Image of FIG. 2.
FIG. 2.

SEM images of stack (a) annealed at and (b) annealed at for .

Image of FIG. 3.
FIG. 3.

Cross-section HRTEM images of (001) (a) as-deposited and (b) annealed at for .

Image of FIG. 4.
FIG. 4.

Cross-section HRTEM images of (001) (a) as-deposited and (b) annealed at for .

Image of FIG. 5.
FIG. 5.

EDS depth profile of for (a) as-deposited Cu signal, (b) as-deposited Zr signal, (c) as-deposited Si signal, (d) annealed Cu signal, (e) annealed Zr signal, and (f) annealed Si signal.

Image of FIG. 6.
FIG. 6.

Sheet resistance of Cu vs annealing temperature for and .

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/content/avs/journal/jvstb/26/5/10.1116/1.2976571
2008-09-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of ZrN and Zr–Ge–N thin films as diffusion barriers for Cu metallization on Si
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/5/10.1116/1.2976571
10.1116/1.2976571
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