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Resistivity change of the diamondlike carbon, deposited by focused-ion-beam chemical vapor deposition, induced by the annealing treatment
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10.1116/1.2978400
/content/avs/journal/jvstb/26/6/10.1116/1.2978400
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/6/10.1116/1.2978400
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Figures

Image of FIG. 1.
FIG. 1.

Scanning transmission electron microscopy image of the DLC pillar structure and the measurement points for TEM-EELS measurement without the annealing treatment.

Image of FIG. 2.
FIG. 2.

TEM-EELS C -edge spectra of the DLC pillar without and with annealing treatment: (a) EELS spectra of the DLC pillar on the measurement point (inner), (b) EELS spectra of the DLC pillar on the measurement point (top), and (c) EELS spectra of the DLC pillar on the measurement point (outer).

Image of FIG. 3.
FIG. 3.

Annealing temperature dependency of the C fraction.

Image of FIG. 4.
FIG. 4.

Atomic ratio changes of DLC by the annealing treatment.

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/content/avs/journal/jvstb/26/6/10.1116/1.2978400
2008-12-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistivity change of the diamondlike carbon, deposited by focused-ion-beam chemical vapor deposition, induced by the annealing treatment
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/26/6/10.1116/1.2978400
10.1116/1.2978400
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