Latent image formation in chemically amplified extreme ultraviolet resists with low activation energy for deprotection reaction
Aerial image of incident EUV and initial distributions of acid and quencher. A line-and-space pattern with half pitch was assumed. The exposure dose was . The deviation between the aerial image and the acid distribution was caused by secondary electrons.
Representative change in distribution of deprotected unit concentration after EUV exposure with . All acids were consumed within of exposure. The diffusion coefficient was assumed to be constant. The quencher concentration was optimized for fabrication. The deprotection reaction was assumed to proceed at a diffusion-controlled rate. These distributions were calculated using the initial distributions shown in Fig. 1 as a boundary condition. The dashed line represents the normalized aerial image of incident EUV.
Dependence of latent image quality on exposure dose. The latent images shown here are those formed after all acid was consumed. Quencher concentrations were optimized for each exposure dose so that patterns could be resolved. The exposure doses are 5, 10, 20, 30, 40, and from the bottom line to the top line at the axis. The dashed line represents the normalized aerial image of incident EUV.
Parameters used in the simulation.
Article metrics loading...
Full text loading...