Schematic for EPD from an aqueous suspension of SWCNTs. The circles represent ions and ions . (a) When the field is applied, ions from the salt and the water move toward the electrodes and ions collect on the insulator. can attach to the SWCNTs and increase their attraction to the cathode. (b) The first SWCNT that attaches to the base of the window modifies the electric field. (c) If the first SWCNT deposits near the center of the window all subsequent SWCNTs will be attracted to the already deposited SWCNT.
Scanning electon microscopic images of SWCNTs deposited in diameter by 50 nm deep vias in over Co using electrophoresis with bias of 10 V and depostion time of 10 min. (a) Representative area showing that all holes are populated and no SWCNTs are observed on the surface of the as compared to before deposition shown in the inset. Scale bar is 200 nm. (b) High magnification image of a via filled with one SWCNT (or bundle) near the center of the via. Scale bar is 100 nm. (c) 632.8 nm excited Raman spectrum of EPD sample from diameter area which covers an array of holes. Characteristic SWCNT peaks are labeled and match those from the pristine SWCNTs used in the suspension.
Finite element calculations of electric field for 50 nm deep via in over metal with (contours are equipotential lines and arrows are the electric field): (a) 100 nm diameter via and (annotated with circles) (b) after deposition of 1 nm diameter by 100 nm long nanotube at the center with the trace (dashed line) of a positively charged particle approaching from a 350 nm radius from a line that is vertical to the center of the via. (c) Electric field near a via with 10 nm metal biased with and (d) calculated trace of positively charged particle approaching from a 200 nm radius. (e) Electric field and trace of positively charged particle approaching a 40 nm diameter via with 1 nm diameter by 100 nm long nanotube attached to the metal at the base of the via. The legend for the electric field and equipotentials applies to all figures. The scale bar in (a) is 100 nm and represents the magnification of all of the plots.
(a) 3D simulation of 10 nm diameter by 100 nm long nanotubes deposited in a 500 nm long by 80 nm wide by 50 nm deep slot after approaching from random starting coordinates with and .
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