Gigahertz surface acoustic wave generation on ZnO thin films deposited by radio frequency magnetron sputtering on III-V semiconductor substrates
X-ray diffraction pattern of a sample with thick ZnO thin film on InP substrate grown by radio frequency magnetron sputtering. The FWHM of the main peak at 34.47° degree corresponding to (002) orientation is 0.22°.
(a) Scanning electron microscope side view of a cleaved sample; (b) atomic force microscopy image of the deposited ZnO film surface on InP substrate; the inset shows the enlarged image of the ZnO film surface.
(a) Scanning electron microscope picture of an e-beam defined transducer with a finger width of and a period of 50; (b) layout of the measurement setup, showing the geometry of the input and output transducers on the sample.
Measured SAW spectrum response centered at with a broadband spectrum analyzer; the interference pattern is due to the Fabry-Pérot-type resonance formed between the input and output transducers with a periodicity of .
Optimal sputtering conditions for ZnO thin films.
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