Representation of the fabrication of the checkerboard trimming chemical pattern (A) and top-down SEM image of checkerboard trimming pattern of resist (B).
Top-down SEM images for the asymmetric ternary blend (70% /5% PS/25% PMMA, and ) on neutral surface (A) and periodic lines [(B)–(D)]. The e-beam dose of the lithographic process was varied to control of the periodic lines.
Top-down SEM images of assembled /PS/PMMA ternary blend ( and ) thin films on a chemical pattern consisting of an array of rectangular spots. The top row shows the ternary blend assembled above the chemical pattern, and the bottom row shows the corresponding assembled ternary blend with the PMMA portions removed. and values for each top/bottom pair of images are provided in the top row. The scale bar is 500 nm.
Top-down SEM images of /PS/PMMA ternary blends thin films after assembly on checkerboard trimming chemical pattern with . The blend composition for (A) was and PMMA ( and ), and for (B) was , , PS, and PMMA ( and ).
Top-down SEM images of rectangular trimming pattern of resist (A) and ternary blend ( and ) thin films on with a similar rectangular trimming pattern (B), checkerboard pattern (C), and PMMA removed checkerboard pattern with arc geometry (D) (the inset shows inner corner curvature with larger area image). All geometry has same of 0.41 and the scale bar is 500 nm.
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