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Influence of ratio on the electrical properties of metal-ferroelectric -insulator -semiconductor capacitors fabricated by rf magnetron sputtering
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10.1116/1.3021025
/content/avs/journal/jvstb/27/1/10.1116/1.3021025
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3021025
/content/avs/journal/jvstb/27/1/10.1116/1.3021025
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/content/avs/journal/jvstb/27/1/10.1116/1.3021025
2009-02-09
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Ar∕O2 ratio on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-semiconductor capacitors fabricated by rf magnetron sputtering
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3021025
10.1116/1.3021025
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