Cross-section TEM micrograph of the Ge nanocrystals in HfAlO dielectrics.
Raman spectra of Ge NCs in HfAlO layer on Si substrate. The inset shows the Raman spectrum of bulk Ge for reference. Ge–Ge TO peak with phonon confinement is found at .
Current-voltage characteristics of the MIS diode. The inset is the schematic of the device structure.
Photoluminescence spectra of the Ge NCs embedded in and HfAlO after annealing at . The PL intensity of the HfAlO sample is stronger than that of the sample due to more Ge NCs.
Electroluminscence spectrum of the MIS LED with Ge in HfAlO structure. The current as the EL measurement is , and the bias voltage is . The dependence of peak intensity on current is also included in the inset.
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