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Light emission and photoluminescence from high- dielectrics containing Ge nanocrystals
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10.1116/1.3025844
/content/avs/journal/jvstb/27/1/10.1116/1.3025844
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3025844
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section TEM micrograph of the Ge nanocrystals in HfAlO dielectrics.

Image of FIG. 2.
FIG. 2.

Raman spectra of Ge NCs in HfAlO layer on Si substrate. The inset shows the Raman spectrum of bulk Ge for reference. Ge–Ge TO peak with phonon confinement is found at .

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics of the MIS diode. The inset is the schematic of the device structure.

Image of FIG. 4.
FIG. 4.

Photoluminescence spectra of the Ge NCs embedded in and HfAlO after annealing at . The PL intensity of the HfAlO sample is stronger than that of the sample due to more Ge NCs.

Image of FIG. 5.
FIG. 5.

Electroluminscence spectrum of the MIS LED with Ge in HfAlO structure. The current as the EL measurement is , and the bias voltage is . The dependence of peak intensity on current is also included in the inset.

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/content/avs/journal/jvstb/27/1/10.1116/1.3025844
2009-02-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light emission and photoluminescence from high-k dielectrics containing Ge nanocrystals
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3025844
10.1116/1.3025844
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