MOS capacitors with on chemical oxide for different annealing conditions without RTA, after RTA at , and : (a) curves and (b) characteristics.
MOS capacitors with on thermal oxide for different annealing conditions without RTA, after RTA at , and : (a) curves and (b) characteristics.
Cross sectional TEM micrographs of MOS capacitors with TiN electrode and gate stack with on thermal oxide (a) without RTA and (b) after RTA at .
MEIS Gd, Si, and O depth profiles for an (a) sample without RTA, (b) after RTA at , and (c) after RTA at .
MOS capacitors initially with on thermal oxide: (a) breakdown measurements of capacitors with Gd silicate after RTA and (b) normalized capacitance characteristics for different annealing conditions measured in forward and backward directions at a frequency of .
Physical thicknesses of the /high- layers measured by MEIS and TEM and values of high- region corresponding to the TEM results.
Article metrics loading...
Full text loading...