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Leakage current effects on plots of high- metal-oxide-semiconductor capacitors
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10.1116/1.3025910
/content/avs/journal/jvstb/27/1/10.1116/1.3025910
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3025910
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Equivalent circuit model (a) a simple three-element model and (b) the proposed model.

Image of FIG. 2.
FIG. 2.

Experimental multifrequency plots with upturns in accumulation.

Image of FIG. 3.
FIG. 3.

The characteristic of the sample in Fig. 2 and the corresponding dc resistance from calculation.

Image of FIG. 4.
FIG. 4.

Estimated capacitance in accumulation of the sample in Fig. 1 from Eq. (3) for different frequencies.

Image of FIG. 5.
FIG. 5.

Multifrequency plots of experimental data (a) and after frequency correction (b). The values of extracted , , and are , , and , respectively.

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/content/avs/journal/jvstb/27/1/10.1116/1.3025910
2009-02-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3025910
10.1116/1.3025910
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