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Duplication of nanoimprint templates by a novel SU-8//PMMA trilayer technique
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of the silicon grating templates fabricated by electron beam lithography with different periods of (a) , (b) 500 nm, and (c) 300 nm.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic of the pattern transfer process based on SU8//PMMA trilayer NIL. (a) The silicon substrate is coated by the trilayer system; (b) imprinting the trilayer system; (c) after imprint, there is a very thin residual SU8; (d) RIE is used to remove the residual SU8; (e) and PMMA are etched away by and RIEs, respectively, after which the undercut is formed; (f) Cr is deposited onto the structure; (g) Cr structures after metal lift-off; (h) deep etching the silicon substrate and removing the Cr.

Image of FIG. 3.
FIG. 3.

SEM images of the grating with 300 nm period after each step of the replication process. (a) After trilayer imprint; (b) removing the residual SU8; (c) etching the PMMA, an undercut is formed.

Image of FIG. 4.
FIG. 4.

SEM images of the replication patterns for gratings with different periods of (a) , (b) 500 nm, and (c) 300 nm. The inset shows the enlarged images of the replicated patterns.

Image of FIG. 5.
FIG. 5.

(a) SEM images of the trilayer system after removing the residual SU8 with a long etching time and (b) its corresponding replication pattern.

Image of FIG. 6.
FIG. 6.

(Color online) SEM images of the samples after removing the PMMA with RIE at 20 SCCM, 40 W, 3 Pa after different etching times: (a) 45 s RIE, the structure is still stable with a thick residual PMMA; (b) 55 s RIE, the structure is about to collapse with a thin residual PMMA; (c) 65 s RIE, the structure completely collapsed with no residual PMMA. (d) The RIE result after reducing the chamber pressure. The sidewall of PMMA becomes more vertical.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique