High frequency characteristics of MIS structures with studied double gate dielectric layers.
Exemplary set of characteristics of MIS structure after certain degree of stress—in the picture sequence of measurements order is also shown.
Hysteresis characteristics of investigated stacks expressed as the flat-band voltage vs stress voltage.
Comparison of charge , , and values in the investigated double gate dielectric stacks; in the figure the effective charge for the single hafnium dioxide (dashed line)was also presented.
Current density vs gate voltage of the semiconductor/double gate dielectric systems.
Optical thickness and basic electrophysical properties of studied silicon/double gate dielectric systems, resulted from characteristics analysis.
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