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Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices
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10.1116/1.3054353
/content/avs/journal/jvstb/27/1/10.1116/1.3054353
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3054353

Figures

Image of FIG. 1.
FIG. 1.

High frequency characteristics of MIS structures with studied double gate dielectric layers.

Image of FIG. 2.
FIG. 2.

Exemplary set of characteristics of MIS structure after certain degree of stress—in the picture sequence of measurements order is also shown.

Image of FIG. 3.
FIG. 3.

Hysteresis characteristics of investigated stacks expressed as the flat-band voltage vs stress voltage.

Image of FIG. 4.
FIG. 4.

Comparison of charge , , and values in the investigated double gate dielectric stacks; in the figure the effective charge for the single hafnium dioxide (dashed line)was also presented.

Image of FIG. 5.
FIG. 5.

Current density vs gate voltage of the semiconductor/double gate dielectric systems.

Tables

Generic image for table
TABLE I.

Optical thickness and basic electrophysical properties of studied silicon/double gate dielectric systems, resulted from characteristics analysis.

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/content/avs/journal/jvstb/27/1/10.1116/1.3054353
2009-02-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3054353
10.1116/1.3054353
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