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Impact of a barrier on metal-oxide-semiconductor capacitor electrical properties
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10.1116/1.3065437
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    Affiliations:
    1 Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully F-69134, France
    2 Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, INSA de Lyon, 7 Avenue Jean Capelle, Villeurbanne F-69621, France
    3 Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully F-69134, France
    4 Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, INSA de Lyon, 7 Avenue Jean Capelle, Villeurbanne F-69621, France
    5 Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully F-69134, France
    a) Author to whom correspondence should be addressed; Tel.: +33 (0)4 72 18 60 49; electronic mail: loic.becerra@ec-lyon.fr
    J. Vac. Sci. Technol. B 27, 384 (2009); http://dx.doi.org/10.1116/1.3065437
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/content/avs/journal/jvstb/27/1/10.1116/1.3065437
2009-02-09
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/1/10.1116/1.3065437
10.1116/1.3065437
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