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high-electron mobility transistor with channel grown by metal-organic chemical vapor deposition
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10.1116/1.3093883
/content/avs/journal/jvstb/27/2/10.1116/1.3093883
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3093883
/content/avs/journal/jvstb/27/2/10.1116/1.3093883
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/content/avs/journal/jvstb/27/2/10.1116/1.3093883
2009-03-11
2014-11-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaAs∕GaAs high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3093883
10.1116/1.3093883
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