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high-electron mobility transistor with channel grown by metal-organic chemical vapor deposition
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10.1116/1.3093883
/content/avs/journal/jvstb/27/2/10.1116/1.3093883
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3093883

Figures

Image of FIG. 1.
FIG. 1.

Calculated band structure for the two investigated HEMTs. (Depth starts from the AlGaAs barrier layer.)

Image of FIG. 2.
FIG. 2.

Measured dc transconductance per millimeter of gate width of the control HEMT (solid line) and the composite-channel HEMT (short dashed line). The drain is biased at .

Image of FIG. 3.
FIG. 3.

Breakdown characteristics of (a) control HEMT and (b) composite-channel HEMT measured at various values (inset). Gate leakage current shown as reference.

Image of FIG. 4.
FIG. 4.

Frequency dependence of short-circuit current gain and MAG/MSG of the proposed HEMTs at gate and drain voltages given in the figure. Extrapolation of MAG vs log(frequency) at /decade produced maximum frequencies of oscillation of 31.5 and for control HEMT and the composite-channel HEMTs, respectively.

Image of FIG. 5.
FIG. 5.

Measured gate bias dependence of and (extracted from MAG using /octave extrapolation) at of drain bias. Both control HEMT and composite-channel HEMT are shown.

Tables

Generic image for table
TABLE I.

Layer stack for two studied HEMTs. Both HEMT structures are identical except for the channel layers. Two quantum well structures are used (a) uniform composition and (b) composite channels.

Generic image for table
TABLE II.

Comparison of performance of presented HEMTs with various channel schemes. Comparative results of devices with various channel designs are shown.

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/content/avs/journal/jvstb/27/2/10.1116/1.3093883
2009-03-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaAs∕GaAs high-electron mobility transistor with In0.1Ga0.9As∕In0.22Ga0.78As∕In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3093883
10.1116/1.3093883
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