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Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases
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10.1116/1.3100266
/content/avs/journal/jvstb/27/2/10.1116/1.3100266
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3100266

Figures

Image of FIG. 1.
FIG. 1.

Room temperature peak PL intensity as a function of storage time in air for ODT SAMs on GaAs prepared from liquid and vapor phases as well as that of untreated and hydrogenated GaAs substrates. The PL data were fitted to exponential decay functions with the fitting results given in Table I .

Image of FIG. 2.
FIG. 2.

HRXPS spectra of the (a) and (b) core levels of GaAs after various treatments and SAM preparation methods recorded at a take-off angle of 90°. The spectra have been offset vertically for clarity and fitted to show the contributions of the component features.

Image of FIG. 3.
FIG. 3.

HRXPS spectra of specific (a) and (b) core levels of GaAs after various treatments and SAM preparation methods recorded at a take-off angle of 90° (gray doublet: Ga/As oxides, white doublet: metallic Ga/elemental As, black doublet: Ga–S/As–S). The spectra have been offset vertically for clarity. The signals from the Ga/As oxides, metallic Ga/elemental As, and Ga–S/As–S components have been multiplied by a factor of 5 relative to those shown in Fig. 2 to accentuate the differences between the curves.

Image of FIG. 4.
FIG. 4.

HRXPS spectra of the (a) and (b) core levels of GaAs after various treatments and SAM preparation methods recorded at a take-off angle of 90°. The spectra have been offset vertically for clarity.

Image of FIG. 5.
FIG. 5.

HRXPS spectra of the region for the SAM-modified and hydrogen-cleaned GaAs samples recorded at take-off angles of (a) 90° and (b) 30°. The spectra have been offset vertically for clarity (TOA: take-off angle) (white peak: , black doublet: ).

Image of FIG. 6.
FIG. 6.

Spectra of ellipsometric parameters (a) and (c) of a vapor-deposited ODT SAM on GaAs for various angles of incidence (thick gray line: experimental data, thin black line: model fit). In (b) the best-fit BEMA model to the corresponding spectra is shown.

Image of FIG. 7.
FIG. 7.

Difference spectra (experimental–simulated) of ellipsometric parameters (a) and (b) of a vapor-deposited ODT SAM on GaAs for various angles of incidence. For clarity, the spectra at angles of incidence of 55° and 65° have been excluded.

Image of FIG. 8.
FIG. 8.

Difference spectra (experimental–simulated) of ellipsometric parameters (a) and (c) of an atomic-hydrogen-cleaned GaAs substrate for various angles of incidence. For clarity, the spectra at angles of incidence of 55° and 65° have been excluded. In (b) the best-fit BEMA model to the corresponding spectra is shown.

Image of FIG. 9.
FIG. 9.

Difference spectra (experimental–simulated) of ellipsometric parameters (a) and (c) of a solution-deposited ODT SAM on GaAs for various angles of incidence. For clarity, the spectra at angles of incidence of 55° and 65° have been excluded. In (b) the best-fit BEMA model to the corresponding spectra is shown.

Tables

Generic image for table
TABLE I.

Parameters obtained from the fit analysis of the PL decay measurements for the SAM-modified and hydrogenated GaAs samples.

Generic image for table
TABLE II.

Static water CAs measured on GaAs following various treatments and SAM deposition methods. The CAs were measured on newly treated surfaces as well as after being exposed to air for a 4 month period.

Generic image for table
TABLE III.

Binding energies of different peaks in the and spectra presented in Figs. 2 and 3 . For simplicity, only the energy of the main component in each doublet is reported.

Generic image for table
TABLE IV.

Ratios of elements calculated from the integral intensities of the main peaks in the respective angle-dependent XPS spectra.

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/content/avs/journal/jvstb/27/2/10.1116/1.3100266
2009-03-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/2/10.1116/1.3100266
10.1116/1.3100266
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