Stable -type ZnO:P nanowire/-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
(Color online) (a) Scheme of the ZnO:P/ZnO:Ga junctions including one - and one -contact. The SEM image (b) is a top view on the Ni–Au contact pads on top of the embedded ZnO:P nanowire array. The connection to the wires is made with silver glue.
Scanning electron microscope images of ZnO:P nanowire array on a ZnO:Ga sample: (a) as grown, (b) after polystyrene embedding, and (c) after plasma etching the tips of the ZnO:P wires to remove residual polystyrene.
(Color online) (a) Wide-angle XRD omega scans of the symmetric ZnO(002) reflection of ZnO:P nanowires on ZnO:Ga film, before and after embedding the wires in polystyrene. (b) XRD phi scans of the asymmetric ZnO(104) and the peaks, indicating the in-plane orientation of the hexagonal ZnO on -plane sapphire. Both phi scans are measured on the PS-embedded sample used also in (a).
(Color online) Exemplary measurement through two gold contacts on -type ZnO:Ga film ( contact configuration). The linear curve indicates typical Ohmic behavior of the -type contacts.
(Color online) Rectifying curves of two typical ZnO junctions on the same substrate, denoted and , plotted in linear and logarithmic current scale. In addition, the characteristics of these two -contacts is shown, which corresponds to the configuration of two opposite diodes. This curve is dominated by the leakage currents of the two diodes.
(Color online) Fit with the equation (red curve) to a typical experimental curve (here: junction from Fig. 5 ) of a ZnO:P–ZnO:Ga junction (open squares). The fit results are as follows: ; ; .
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