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Ferroelectric thin film field-effect transistors based on heterostructures
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10.1116/1.3086720
/content/avs/journal/jvstb/27/3/10.1116/1.3086720
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/3/10.1116/1.3086720

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Principle layout of ZnO/BTO MISFET transistors.

Image of FIG. 2.
FIG. 2.

(Color online) XRD scan of a STO:Nb (100)/BTO/ZnO/Au heterostructure. The following out-of-plane orientations of the thin film were detected: BTO (001), ZnO(002), and Au(111). No other orientation was revealed, indicating epitaxial growth.

Image of FIG. 3.
FIG. 3.

(Color online) XRD wide angle scans of asymmetric peaks of a STO:Nb (100)/BTO/ZnO/Au heterostructure. The fourfold symmetry of the BTO (103) peaks is in perfect alignment with the substrate STO (310) peaks. The 12 ZnO (104) peaks indicate hexagonal symmetry with 30° rotational domains. The ZnO (104) peaks have been scaled up by a factor of 10 for visibility.

Image of FIG. 4.
FIG. 4.

(Color online) characteristic of a reference MIS diode sample with 2 mm diameter Ohmic contacts for different integration times . Points of current maxima have been demarked by vertical lines, voltage points for the determination of and are shown (refer to text).

Image of FIG. 5.
FIG. 5.

(Color online) characteristics of two individual transistors (leakage current characteristics) on the same sample. A charging behavior is obvious in both curves, which is attributed to the ferroelectric switching of the BTO.

Image of FIG. 6.
FIG. 6.

(Color online) Output characteristics of a ZnO/BTO MISFET at different gate voltages. The dashed line is a guide to the eye, underlining the quadratic behavior of the position of the pinch off points.

Image of FIG. 7.
FIG. 7.

(Color online) Transfer characteristics and calculated channel mobility of a ZnO/BTO MISFET at a fixed source drain voltage of .

Image of FIG. 8.
FIG. 8.

(Color online) (a) Transfer characteristics of a ZnO/BTO MISFET after applying forward and backward pulses, respectively. (b) Ratio of the current in the permanent “on” and the permanent “off” state.

Tables

Generic image for table
TABLE I.

FWHM of HR-XRD rocking curves, of wide-angle XRD -scans, and of wide-angle XRD peaks of a ZnO/BTO heterostructure grown on a single crystalline STO:Nb substrate. The last column gives the out-of-plane lattice constant determined from the selected symmetrical reflexes.

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/content/avs/journal/jvstb/27/3/10.1116/1.3086720
2009-05-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/3/10.1116/1.3086720
10.1116/1.3086720
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