Commercial molecular beam epitaxy production of high quality on large diameter Si substrates
RHEED pattern of a STO layer along the (a) , (b) , and (c)  azimuths.
(a) XRD spectrum of STO/Si; the insert is a XRD rocking curve of a STO (002) film with a FWHM of 0.21°; (b) XRD fringe pattern used in the STO thickness calculation; the insert is a schematic representation of thickness variation across the wafer. (c) Thickness dependence of the FWHM of STO (002) rocking curve.
Thickness dependence of (a) STO lattice constant and (b) out-of-plane misfit strain in the STO thin film; the circles are the experimental results in this work, and the triangles are data from Ref. 20.
AFM image of a thick STO thin film; the lateral scan size is and the vertical scale is .
Cross-section TEM of a STO layer on .
Article metrics loading...
Full text loading...