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Inductively coupled plasma etching of GaAs suspended photonic crystal cavities
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10.1116/1.3154519
/content/avs/journal/jvstb/27/4/10.1116/1.3154519
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/4/10.1116/1.3154519
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Semiconductor etch rate (open circles) and selectivity of semiconductor/ (full squares) as a function of the chamber pressure. The etching is carried out at using an etching power of 1000 W, dc bias of 350 V, flow rate of 4 SCCM, and flow rate of 32 SCCM. SEM cross sections of the etched holes are shown for three chamber pressures: 0.5, 10, and 20 mTorr.

Image of FIG. 2.
FIG. 2.

Semiconductor etch rate (open circles) and selectivity of semiconductor/ (full squares) as a function of dc bias. The etching is carried out at using an etching power of 1000 W, pressure of 10 mTorr, flow rate of 4 SCCM, and flow rate of 32 SCCM. SEM cross sections of the etched holes are shown for two voltages: 170 and 350 V.

Image of FIG. 3.
FIG. 3.

Semiconductor etch rate (open circles) and selectivity of semiconductor/ (full squares) as a function of ICP power. The etching was carried out at using a dc bias of 350 V, pressure of 10 mTorr, flow rate of 4 SCCM, and flow rate of 32 SCCM. SEM cross sections of the etched holes are shown for three ICP powers: 200, 800, and 1000 W.

Image of FIG. 4.
FIG. 4.

Cross-sectional SEM images of the etched photonic crystal holes in the semiconductor etched by CCP-RIE (top) and ICP-RIE (bottom). The dashed lines on the top image show the expected sidewall profile.

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM images of the etched photonic crystal holes in the semiconductor before the removal of the layer: (a) enlarged view of the perforated holes, (b) magnification of the flanks and of the interface between the GaAs and the sacrificial layer, and (c) magnification on the GaAs sidewall surface.

Image of FIG. 6.
FIG. 6.

(Top) Schematic description of the double-heterostructure cavity. (Bottom) Scanning electron microscope image of a cross section of the holes through the GaAs membrane.

Image of FIG. 7.
FIG. 7.

Integrated intensities of the photoluminescence signal emerging from photonic crystal cavity lasers as a function of the excitation energy onto the surface of the samples. Two samples were investigated depending on the process used: empty circles refer to a sample processed with a chlorine-based RIE process (Ref. 23 ) and full squares correspond to a sample processed with our optimized ICP process.

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/content/avs/journal/jvstb/27/4/10.1116/1.3154519
2009-07-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inductively coupled plasma etching of GaAs suspended photonic crystal cavities
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/4/10.1116/1.3154519
10.1116/1.3154519
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