Shadowing effect in IBID pillar growth. SEM images of two pairs of pillars that are grown in different orders (nozzle is located at the left side) on Si; the second pillar is grown (a) at the left side of the first pillar and (b) at the right side of the first pillar. (Viewing angle is 59° with respect to the pillar direction.)
Proximity effect of pillars grown on a semiconducting bulk Si. (a) SEM images of a single pillar and of five pairs of pillars with different separations from 0.3 to . (b) Relationship between diameter and height of the pillars and pillar separation; the curves are model calculations discussed in the text.
Proximity effect of pillars grown on a 45-nm-thick insulating membrane. SEM images of (a) six pairs of pillars with different separations from 0.5 up to . (b) Different pillar bases.
Role of substrate conductivity in the proximity effect. SEM images of (a) one pair of pillars grown on Cu coated Si, (b) one pair of pillars grown on membrane with a Pt line, and (c) pillars grown on Si without or with a neighboring pillar and on membrane with a neighboring pillar or a Pt line.
Proximity effect. Secondary particles are emitted from the growing second pillar (left). If the polar emission angle is between and and if the azimuthal angle is within the shown range of , the emitted particles arrive at the first pillar (right), causing additional growth in the white colored region.
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