XRD patterns of (a) GaN-(0002) and AlGaN-(0002) with their satellite peaks and (b) and reflection peaks for the violet LEDs grown on GaN NL and AlN NL.
Top-view images of CL from the -type GaN surfaces for the violet LEDs grown with (a) GaN NL and (b) AlN NL.
Cross-sectional bright-field TEM images of the violet LED structures grown on (a) GaN NL and (b) AlN NL. Both samples was recoded from . The enlarged images presented the MQW structures grown on -thick AlGaN buffer with (c) GaN NL and (d) AlN NL.
SIMS profiles for the violet LEDs grown on (a) GaN NL and (b) AlN NL; region I, AlGaN blocking layer; region II, two-pairs of QWs grown at ; region III: four-pairs of QWs, and region IV: .
Excitation-power dependent PL spectra at of the violet LEDs on (a) GaN NL and (b) AlN NL.
FWHM values of XRD patterns for GaN-(0002) reflection and reflection of x-ray rocking curves for the AlGaN templates grown on GaN NL and A1N.
Growth temperature and thickness of barriers and wells in the MQWs grown on GaN NL and AlN NL with about -thick of AlGaN buffer. Each well is indicated by Arabic numerals, which correspond to those shown in Fig. 3(b). The barrier adjacent to two wells is indicated by two Arabic numerals, which correspond to those of well numbers shown in Fig. 3(b).
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