Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold
(Color online) Schematic representation of the patterning process.
(Color online) Optical microscopic images of (a) PEDOT: PSS and polarizing optical microscopic images of microstructures (b) P3HT and (c) MEH-PPV.
(Color online) [(a) and (b)] AFM image of P3HT pattern being transfer printed to the Si substrate; (c) polarizing optical microscopic image of microholes of P3HT printed on MEH-PPV film (P3HT dark region; MEH-PPV red dot); (d) AFM cross-sectional profile of the patterned P3HT film from (a) and (b) on Si substrate (thickness of ).
(Color online) Electrical characteristics of OTFTs. (a) Output and (b) transfer characteristic curves of the P3HT transistor whose active layer was patterned by selective lift off with epoxy mold. Inset: optical microscopic images of the P3HT transistor. The bright stripes with the dotted outlines marked S and D are the metallic top contacts. The dark line in bracket is the patterned P3HT line.
Surface energy of P3HT, MEH-PPV, PEDOT: PSS, PDMS, and epoxy.
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