Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
Schematic of a dipole antenna with its leads. The tapering of the leads minimizes their IR contributions in the detector output.
Cross section showing the profile of the bilayer electron beam resist after development of a 50-nm-wide line.
(Color online) End-Hall gridless ion source with a hollow cathode (EH200HC, manufactured by Kaufman and Robinson, Inc., Fort Collins, CO). (a) Anode and the hollow cathode and (b) schematic diagram of the circuitry.
(Color online) Fabricated antenna-coupled asymmetric MOM diodes. (a) Optical micrograph of 20 sensors, (b) the corresponding scanning electron micrograph, and (c) zoomed in view of one of the sensors.
(Color online) Typical characteristics of the ACMOMD. (a) response of the device and a fifth-order polynomial fit, (b) resistance variation with voltage, (c) the nonlinearity of the MOM junction, and (d) variation in the curvature coefficient with voltage.
(Color online) Variation in zero-bias resistance with the corresponding zero-bias curvature coefficient.
(Color online) Typical IR response of our ACMOMDs for a 360° rotation of the antenna polarization with respect to the incident laser polarization.
Effect of in situ cleaning of the top surface of the Al by the ion source. (a) The opening in the bilayer e-beam resist for Pt line, just after development. (b) The widened opening in the bilayer e-beam resist for Pt line due to ion-source-etching step.
(Color online) Etch rates of MMA, PMMA, PECVD , and thermally grown using the ion source for 3, 6, 9, and 12 min etch times.
Comparison of values with other antenna-coupled IR detectors. (Symm—symmetrical barrier, Asymm—asymmetrical barrier, Sput—sputtered, Evap—e-beam evaporated, and FZP—Fresnel zone plates.)
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