1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
Rent:
Rent this article for
USD
10.1116/1.3204979
/content/avs/journal/jvstb/27/5/10.1116/1.3204979
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3204979

Figures

Image of FIG. 1.
FIG. 1.

Schematic of a dipole antenna with its leads. The tapering of the leads minimizes their IR contributions in the detector output.

Image of FIG. 2.
FIG. 2.

Cross section showing the profile of the bilayer electron beam resist after development of a 50-nm-wide line.

Image of FIG. 3.
FIG. 3.

(Color online) End-Hall gridless ion source with a hollow cathode (EH200HC, manufactured by Kaufman and Robinson, Inc., Fort Collins, CO). (a) Anode and the hollow cathode and (b) schematic diagram of the circuitry.

Image of FIG. 4.
FIG. 4.

(Color online) Fabricated antenna-coupled asymmetric MOM diodes. (a) Optical micrograph of 20 sensors, (b) the corresponding scanning electron micrograph, and (c) zoomed in view of one of the sensors.

Image of FIG. 5.
FIG. 5.

(Color online) Typical characteristics of the ACMOMD. (a) response of the device and a fifth-order polynomial fit, (b) resistance variation with voltage, (c) the nonlinearity of the MOM junction, and (d) variation in the curvature coefficient with voltage.

Image of FIG. 6.
FIG. 6.

(Color online) Variation in zero-bias resistance with the corresponding zero-bias curvature coefficient.

Image of FIG. 7.
FIG. 7.

(Color online) Typical IR response of our ACMOMDs for a 360° rotation of the antenna polarization with respect to the incident laser polarization.

Image of FIG. 8.
FIG. 8.

Effect of in situ cleaning of the top surface of the Al by the ion source. (a) The opening in the bilayer e-beam resist for Pt line, just after development. (b) The widened opening in the bilayer e-beam resist for Pt line due to ion-source-etching step.

Image of FIG. 9.
FIG. 9.

(Color online) Etch rates of MMA, PMMA, PECVD , and thermally grown using the ion source for 3, 6, 9, and 12 min etch times.

Tables

Generic image for table
TABLE I.

Comparison of values with other antenna-coupled IR detectors. (Symm—symmetrical barrier, Asymm—asymmetrical barrier, Sput—sputtered, Evap—e-beam evaporated, and FZP—Fresnel zone plates.)

Loading

Article metrics loading...

/content/avs/journal/jvstb/27/5/10.1116/1.3204979
2009-08-27
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3204979
10.1116/1.3204979
SEARCH_EXPAND_ITEM