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Highly sensitive positive-working molecular resist based on new molecule
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10.1116/1.3204984
/content/avs/journal/jvstb/27/5/10.1116/1.3204984
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3204984

Figures

Image of FIG. 1.
FIG. 1.

Structure of the compound used in this study.

Image of FIG. 2.
FIG. 2.

Synthesis of THTPPB.

Image of FIG. 3.
FIG. 3.

DSC curve of THTPPB; heating rate: .

Image of FIG. 4.
FIG. 4.

Microscopy images of micropatterns for (a) TBOTPPB and (b) semi-TBOTPPB resist film on BARC/Si substrates.

Image of FIG. 5.
FIG. 5.

Sensitivity curves of semi-TBOTPPB containing TPSTf with (○), (△), (◻), (▽), (◇), (+), (×), and (⊥) TBA for TPSTf on AR5-600 for EB exposure.

Image of FIG. 6.
FIG. 6.

SEM cross-sectional images of hp line-and-space (1:1) patterns of semi-TBOTPPB containing TPSTf with (a) 0, (b) 10, (c) 20, (d) 30, (e) 40, (f) 50, (g) 60, and (h) TBA on AR5-600 for EB exposure.

Image of FIG. 7.
FIG. 7.

SEM cross-sectional image of hp line-and-space (1:1) pattern of semi-TBOTPPB resist containing TPSTf with PPy for TPSTf on AR5-600 for EB exposure. Dose: .

Image of FIG. 8.
FIG. 8.

SEM cross-sectional images of hp line-and-space (1:1) patterns of semi-TBOTPPB containing TPSTf with TBA on AR5-600 for EB exposure. Dose: .

Image of FIG. 9.
FIG. 9.

SEM cross-sectional images of hp line-and-space (1:1) patterns of AEVETPPB containing TPSTf with (a) 20, (b) 30, and (c) TBA on AR5-600 for EB exposure.

Image of FIG. 10.
FIG. 10.

SEM cross-sectional images of hp line-and-space (1:1) patterns of AEVETPPB containing TPSTf with TBA on AR5-600 for EB exposure. Dose: .

Image of FIG. 11.
FIG. 11.

Sensitivity curves of AEVETPPB containing TPSTf with TBA for TPS-105 on AR5-600 for EB exposure. Protection ratios of AEVETPPB: (a) 40% (○), (b) 26% (△), and (c) 12% (◻).

Image of FIG. 12.
FIG. 12.

SEM cross-sectional images of [(a), (c), and (e)] hp and [(b), (d), and (f)] hp line-and-space (1:1) patterns of AEVETPPB containing TPSTf with TBA on AR5-600 for EB exposure. Protection ratios of AEVETPPB: [(a) and (b)] 40%, [(c) and (d)] 26%, and [(e) and (f)] 12%.

Image of FIG. 13.
FIG. 13.

Sensitivity curve of the AEVEPHS resist (○) containing TPSTf and TBA for TPSTf on AR5-600 for EB exposure.

Image of FIG. 14.
FIG. 14.

plasma etch rate of THTPPB, AEVETPPB, PHS, AEVEPHS, and PMMA.

Tables

Generic image for table
TABLE I.

Compositions of semi-TBOTPPB resists for EB exposure.

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/content/avs/journal/jvstb/27/5/10.1116/1.3204984
2009-08-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly sensitive positive-working molecular resist based on new molecule
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3204984
10.1116/1.3204984
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